q band low noise amplifier 02/18/00 preliminary specifications subject to change qlna4s.4r page 1 -20 -10 0 10 20 30 40 42 44 46 48 50 w304f23c86 gain ret.loss db ghz qlna4s.01r*** mmic features low noise 2.5 db n.f. high gain 22 db gain (min) frequency range : 40-46 ghz 50 ? ? ? ? zin / zout >10 db input / output return loss > 8 dbm output power at 1db gain compression chip size : 1.5 mm x 0.7 mm substrate thickness : 75 m bond pad dimensions 100 m x 100 m description the rockwell qlna4s.01r is a phemt low noise amplifier that operates from 40 to 46 ghz. this 4 stage amplifier has 24 db nominal gain with 3.0 db nominal noise figure and 1 db gain compression of 8 dbm output power minimum. this mmic is unconditionally stable. absolute maximum ratings symbol parameters/conditions min max units v d 1 2 3 drain supply voltage 5 volts v g 1 2 3 gate supply voltage -0.6 0.0 volts id total total drain current 90 ma ig total total gate current 0.1 ma pin rf input power 30 dbm t ch operating channel temperature 150 c t max max assembly temperature 300* c t stg max storage temperature - 65 165 c t base maximum base plate temperature 140 c ? 30 minute maximum ?
q band low noise amplifier 02/18/00 preliminary specifications subject to change qlna4s.4r page 2 rf and electrical specifications conditions t base = 25 c, z source = z load 50 +/- 5 ? ?? ? symbol parameters/conditions min typ max units v d 1 2 3 drain supply voltage 2.5 3 5 volts v g 1 2 3 gate supply voltage -0.6 -0.2 0.0 volts id total total drain current (@ typ vgs) 30 50 90 ma frequency specified bandwidth edges 40 46 ghz gain** small signal 22 24 db ? gain small signal gain flatness <1 1.2 db/ghz p1db(note 1) power output at 1db gain compression 8 10 dbm rl in input port return loss 8 10 db rl out output port return loss 8 10 db isolation reverse isolation 30 40 db nf(no t e 1) no i s e f i gure 2.5 3 . 5 d b (note 1) these measurements will be carried out on a sampled basis. a random representative sample of dies is mounted and tested for noise figure and 1 db gain compression. (***) rockwell science center reserves the right to make improvements in this device, including die size reduction, while maintaining all rf & dc specifications. the general notes on rockwell phemt products will be supplied upon user?s request . in addition to inspection criteria it will contain descriptions, biasing instructions, reliability data. (**) within the temperature range -35 c to +85 c, small signal gain shall not vary by more than +/- 2.0 db and shall remain within the range 21 db to 27.5 db . under the same conditions the noise figure shall not exceed 3.2 db. each die is fully dc tested and rf s-parameters are measured. full 2-port s-parameter data on individual die will be supplied. all dies will pass visual inspection as dictated by the rules contained in section a of the general notes on rockwell phemt products (applicable sections of mil-i-45208) every die has a unique identifier number on-chip for complete traceability. a conductive epoxy or a flux-less solder die attach is recommended. the die should be attached to an electrically conductive surface to complete dc and rf ground paths. the ground path inductance should be minimized (<10 ph) to assure stability. the front side metal is compatible with thermo-sonic 1 mil wire bonding. the backside metal is compatible with die attach methods not exceeding tmax . gaas mmics are esd sensitive. proper precautions should be used when handling these devices. front and backside metal is gold. in the event of performance verification, dies will be mounted and tested in a standard rockwell approved test fixture for q band. (see section b of the general notes on rockwell phemt products).
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